According to CoinMeta, Samsung Electronics unveiled its prototype products at the Future Storage and Memory Conference held in Santa Clara, California, USA. These chips feature a structure of over 400 layers and utilize a new wafer bonding architecture to enhance storage density and performance. Samsung claims that its new technology increases storage density by approximately 58% compared to the previous generation, while also improving read, write, and input/output speeds to meet the growing demands of artificial intelligence systems for higher-capacity, more energy-efficient storage solutions. Samsung also demonstrated the industry's first conceptual models for ZHBM and ZNAND-O architectures. This technology allows for more data to be stored in a smaller space by vertically stacking memory cells. Unlike traditional processors where HBM and AI are packaged side by side, Samsung's ZHBM stacks memory vertically above an AI accelerator, which reduces data transmission distances, increases bandwidth, and improves energy efficiency. Samsung states that its wafer bonding technology has the potential to achieve more than 10 times the storage density of traditional HBM5 memory, while also tripling energy efficiency and reducing thermal resistance by over half.