News from the IT Home on October 22nd: Micron (Micron) held its annual technology webinar yesterday local time, where they looked ahead to DRAM, pan-HBM, NAND, and SSD. This article focuses on the flash memory category.

Micron has previewed its G11 NAND flash memory, which is expected to see an increase in production capacity in the second half of 2027. It seems that this company has skipped the G10 generation.

G11 NAND With over 400 layers stacked, wafer-to-wafer bonding technology is used, resulting in a storage density that is approximately twice that of the current 276-layer G9 NAND. At the same time, it can achieve up to 1.5 times the I/O rate, and data transmission energy consumption can be reduced by more than 25%.

After G11, Micron plans to introduce breakthrough high-migration-rate materials in NAND to achieve an ultra-dense cell architecture and enhance energy-saving properties.

Micron introduced two types of AI-class data center-level NAND designs, which are respectively GPU direct connection IOPS optimization products based on SLC, and bandwidth optimization products similar to those defined by HBF.

Micron also showcased its comprehensive AI optimized storage solutions.